Peculiarities of vacancy-related defects formation in Si doped with tin

Transformations of vacancy-related defects during isochronal annealing of electron-irradiated Si:Sn crystals were investigated by means of infrared absorption spectroscopy. A band at 4100cm−1 (the position at 300K) appeared in absorption spectra of the irradiated Si:Sn samples simultaneously with th...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.541-545
Main Authors: Khirunenko, L.I., Kobzar, O.O., Pomozov, Yu.V., Sosnin, M.G., Tripachko, M.O.
Format: Article
Language:English
Subjects:
Irradiation
Silicon
Tin
Vacancy
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Summary:Transformations of vacancy-related defects during isochronal annealing of electron-irradiated Si:Sn crystals were investigated by means of infrared absorption spectroscopy. A band at 4100cm−1 (the position at 300K) appeared in absorption spectra of the irradiated Si:Sn samples simultaneously with the disappearance of absorption lines due to divacancies (V2). In the low-temperature absorption spectra this band exhibited splitting into series of narrow equidistant lines. Another similar series of equidistant absorption lines was observed at lower frequencies, 2750–2900cm−1. These two series of lines were assigned to Sn2V2 center in different charge states. Sn atoms were found to be effective sinks for mobile vacancy–oxygen (VO) centers. An absorption band at 807cm−1 was assigned to SnVO complex.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2003.09.139