Preparation of ultralow dielectric-constant porous silica films using Tween 80 as a template

Porous silica films with ultralow-k (1.47-2.36) and low leakage current densities (10-7 A/cm2 or lower in an electric field of 1 MV/cm) were prepared by a surfactant-templating process. The nonionic surfactant Tween 80 [also known as Polyoxyethylene (20) sorbitan monooleate] was used as a template i...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2003-08, Vol.150 (8), p.F164-F167
Main Authors: TING, Chih-Yuan, OUYAN, De-Fa, WAN, Ben-Zu
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Physics
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Summary:Porous silica films with ultralow-k (1.47-2.36) and low leakage current densities (10-7 A/cm2 or lower in an electric field of 1 MV/cm) were prepared by a surfactant-templating process. The nonionic surfactant Tween 80 [also known as Polyoxyethylene (20) sorbitan monooleate] was used as a template in the spin-on film preparation process. The effects from the parameters for preparing coating solution were carefully investigated. Due to its simplicity, the reported process may be a promising one for the preparation of ultralow-k dielectrics in the future.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1592521