Hot wall epitaxy of high-quality CdTe/Si(1 1 1)

Cadmium telluride (1 1 1) epitaxial layers were directly grown by hot wall epitaxy (HWE) on the hydrogen-terminated Si(1 1 1) substrate without any preheating treatment. Low-temperature photoluminescence and four-crystal rocking curves X-ray diffraction (XRD) were used to establish the optimum growt...

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Bibliographic Details
Published in:Journal of crystal growth 2003-08, Vol.256 (1), p.20-26
Main Authors: Lalev, Georgi M., Wang, Jifeng, Abe, Seishi, Masumoto, Katashi, Isshiki, Minoru
Format: Article
Language:English
Subjects:
A3. Hot wall epitaxy
B2. Semiconducting II–VI materials
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Cadmium telluride (1 1 1) epitaxial layers were directly grown by hot wall epitaxy (HWE) on the hydrogen-terminated Si(1 1 1) substrate without any preheating treatment. Low-temperature photoluminescence and four-crystal rocking curves X-ray diffraction (XRD) were used to establish the optimum growth conditions for HWE of CdTe/Si(1 1 1). Two-step growth regime was originally designed for obtaining high-quality CdTe crystal epilayers for further fabrication of Hg 1− x Cd x Te infrared detectors. Four-crystal rocking curves XRD data indicate significantly improvement in the crystal quality after applying the two-step growth regime, and the best full-width at half-maximum value of 118 arcsec was obtained for 5 μm thick epilayer.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(03)01317-4