New infrared spectroscopic ellipsometer for low-k dielectric characterization

A new infrared spectroscopic ellipsometer devoted to the characterization of silicon microelectronics has been recently developed at SOPRA. Its main features are the ability to measure on a small spot ( 80-200 microns) with a high signal/noise ratio. An original patented optical design suppresses ba...

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Bibliographic Details
Main Authors: Boher, P, Bucchia, M, Guillotin, C, Defranoux, C, Fouere, J C
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:A new infrared spectroscopic ellipsometer devoted to the characterization of silicon microelectronics has been recently developed at SOPRA. Its main features are the ability to measure on a small spot ( 80-200 microns) with a high signal/noise ratio. An original patented optical design suppresses back face reflection and insures good quality spectral measurements in the 600-7000/cm range. Excellent signal/noise ratio allows one to perform measurements in less than 30s. All automation and real time analysis are included to offer an operator orientated metrology tool. Hereafter, the instrument is presented in details, and used to characterize different kinds of low-k dielectrics.
ISSN:0094-243X