Electrical barrier properties of meso-porous silicon

We present a contribution dealing with the study of the barrier properties of meso-porous silicon (PS) with metals and p +-Si crystalline silicon. Metal/PS/p +-Si and p +-Si/PS/p +-Si structures with different thickness (1–10 μm) of PS are investigated by means of current–voltage and capacitance–vol...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2003-08, Vol.101 (1), p.313-317
Main Authors: Remaki, B., Populaire, C., Lysenko, V., Barbier, D.
Format: Article
Language:English
Subjects:
Electrical characterization
Electronics transport
Porous silicon
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Summary:We present a contribution dealing with the study of the barrier properties of meso-porous silicon (PS) with metals and p +-Si crystalline silicon. Metal/PS/p +-Si and p +-Si/PS/p +-Si structures with different thickness (1–10 μm) of PS are investigated by means of current–voltage and capacitance–voltage characteristics combined with thermal stimulation in the 150–350 K temperature range. These experiments allowed a clear separation of bulk and contacts contributions to the electrical impedance. The barrier properties (nature and heights) of metal/PS contacts and PS/Si interfaces are then evaluated. The p +-Si/PS/ p +-Si structures exhibit ohmic contacts allowing space charge limited current (SCLC) ensured by carriers injection in the PS layers. From this analysis, the electrical behavior of the metal/PS/p +-Si structures is interpreted in terms of a Schottky barrier biased through a semi-insulating PS layer.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(02)00731-6