Radiative defects in CuGaS2 thin films

The radiative defects in vacuum-deposited CuGaS2 is studied by photoluminescence spectroscopy (PL). The PL of Cu-rich layers is dominated by donor–acceptor lines at 2.3 and 2.26eV attributed to a common shallow donor (the S vacancy) and two acceptors (possibly Ga vacancies and CuGa antisites). The P...

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Published in:Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.923-927
Main Authors: Botha, J.R., Branch, M.S., Leitch, A.W.R., Weber, J.
Format: Article
Language:English
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CuGaS2
Intrinsic defects
Photoluminescence
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description The radiative defects in vacuum-deposited CuGaS2 is studied by photoluminescence spectroscopy (PL). The PL of Cu-rich layers is dominated by donor–acceptor lines at 2.3 and 2.26eV attributed to a common shallow donor (the S vacancy) and two acceptors (possibly Ga vacancies and CuGa antisites). The PL of near-stoichiometric to Ga-rich layers is dominated by green PL in the 2.3–2.45eV range and broad yellow/red luminescence below 2.2eV. The green PL is interpreted in terms of the (0/+) and (+/2+) levels associated with the S vacancy (a double donor), and the Cu vacancy (an acceptor). The yellow/red PL is typical for highly compensated semiconductors and is ascribed to donor–acceptor transitions involving Cu vacancies and deep donor levels.
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subjects CuGaS2
Intrinsic defects
Photoluminescence
title Radiative defects in CuGaS2 thin films
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