Optical analyses (SE and ATR) and other properties of LPCVD Si3N4 thin films

Thin silicon nitride films (less than 20 nm) deposited on (100) silicon substrates via low pressure chemical vapor deposition (LPCVD) at three temperatures (730, 760, and 825 deg C) were analyzed by spectroscopic ellipsometry (SE), attenuated total reflection (ATR), and other tools. Films appeared t...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 2003-12, Vol.150 (12), p.G785-G789
Main Authors: YUN WU, HUICAI ZHONG, ROMERO, Jeremias, TABERY, Cyrus, CHEUNG, Cristina, MACDONALD, Brian, BHAKTA, Jay, HALLIYAL, Arvind, CHEUNG, Fred, OGLE, Robert
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thin silicon nitride films (less than 20 nm) deposited on (100) silicon substrates via low pressure chemical vapor deposition (LPCVD) at three temperatures (730, 760, and 825 deg C) were analyzed by spectroscopic ellipsometry (SE), attenuated total reflection (ATR), and other tools. Films appeared to have similar optical bandgaps (~5 eV), and the values decreased slightly with the higher deposition temperature. Second ionic mass spectroscopy results showed that a similar amount of oxygen exists in the interface between silicon and silicon nitride nitride. ATR spectra showed no sign of Si-H bonds and decreasing N-H bonds at higher deposition temperature in the thin films. The electrical properties of the films are also discussed. 10.1149/1.1624842
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1624842