Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [$11\bar{2}0$] Direction

Stacking fault density was reduced during seeded sublimation growth of SiC single crystals in the [11-20] direction by growing the crystals on a (11-20) seed crystal several degrees off-oriented toward < 0001 > . The density of the basal plane stacking faults decreased from 100-150 cm-1 to app...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003-03, Vol.42 (Part 2, No. 3B), p.L277-L279
Main Authors: Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo
Format: Article
Language:English
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Summary:Stacking fault density was reduced during seeded sublimation growth of SiC single crystals in the [11-20] direction by growing the crystals on a (11-20) seed crystal several degrees off-oriented toward < 0001 > . The density of the basal plane stacking faults decreased from 100-150 cm-1 to approximately 10 cm-1 as the degree of off-orientation was increased. Results indicate that the stacking fault formation is a kinetically induced process, and that the introduction of off-orientation prevents the stacking fault formation through modification of the surface growth kinetics. 9 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L277