Optical spin polarization in negatively charged InAs self-assembled quantum dots under applied electric field

We have studied the influence of an external electric field on the optical spin polarization of initially negatively charged InAs/GaAs quantum dots (QDs). The spin polarization of the carriers was controlled by measuring the photoluminescence (PL) circular polarization. We have found that the PL pol...

Full description

Saved in:
Bibliographic Details
Published in:Physica Status Solidi (b) 2003-07, Vol.238 (2), p.250-253
Main Authors: Kalevich, V. K., Ikezawa, M., Okuno, T., Shiryaev, A. Yu, Zhukov, A. E., Ustinov, V. M., Brunkov, P. N., Masumoto, Y.
Format: Article
Language:English
Subjects:
73.21.La
78.47.+p
78.55.Cr
78.67.Hc
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have studied the influence of an external electric field on the optical spin polarization of initially negatively charged InAs/GaAs quantum dots (QDs). The spin polarization of the carriers was controlled by measuring the photoluminescence (PL) circular polarization. We have found that the PL polarization of the QD is negative under an excitation above the GaAs barrier, and that it becomes positive under an excitation below the barrier. An applied negative electric field destroys both positive and negative polariza‐tion. The time decay of the negative polarization was found from time‐resolved measurements to exceed strongly the QD radiative lifetime. This fact indicates a long‐living spin memory in the dots under study.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200303021