Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs (111)A Substrates

Authors have made the first observation of photoluminescence (PL) from an ultrathin InAs/GaAs single quantum well (SQW) grown on GaAs (111)A substrate by means of MBE. When the thickness of the InAs wells in the SQW increases from 1 to 6 monolayers, the PL peak energy at 10 K decreases from 1.47 to...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003-07, Vol.42 (Part 2, No. 7B), p.L807-L809
Main Authors: Mashita, Masao, Numata, Toshifumi, Nakazawa, Hideki, Kajikawa, Yasutomo, Koo, Bon-Heun, Makino, Hisao, Yao, Takafumi
Format: Article
Language:English
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Summary:Authors have made the first observation of photoluminescence (PL) from an ultrathin InAs/GaAs single quantum well (SQW) grown on GaAs (111)A substrate by means of MBE. When the thickness of the InAs wells in the SQW increases from 1 to 6 monolayers, the PL peak energy at 10 K decreases from 1.47 to 1.36 eV and the intensity abruptly decreases. The PL intensity appears to be related to the quality of the GaAs cap layer as well as the InAs wells. The PL peak energies exceed the calculated values. This discrepancy may be due to the diffusion into GaAs of In atoms at the GaAs/InAs interfaces. 17 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L807