Raman scattering under pressure in ZnGa2Se4

• Published in: The Journal of physics and chemistry of solids 2003-09, Vol.64 (9-10), p.1597-1601
• Main Authors: ALLAKHVERDIEV, K, GASHIMZADE, F, KERIMOVA, T, MITANI, T, NAITOU, T, MATSUISHI, K, ONARI, S
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Iii-v and ii-vi semiconductors; Infrared and raman spectra and scattering; Lattice dynamics; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Phonon states and bands, normal modes, and phonon dispersion; Phonons and vibrations in crystal lattices; Physics
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/S0022-3697(03)00077-5

The Raman scattering spectra of ZnGa2Se4 under pressure were investigated at 300 K up to 18.9 GPa. Two stages were observed in the pressure dependences of Raman bands. Such behavior in accordance with the experimental findings existing in literature and was attributed as arising due to the order-disorder phase transition in the cation sublattice. Using the Harrison-Keating's model of the lattice dynamics modified for the crystals with the tetragonal structure, the bulk modulus B and the mode-Gruneisen parameters Gi were determined for the first time. It is shown that a better agreement between the experimental and calculated values of Gi is observed, if one takes into consideration different frequency-pressure behavior for the bond-bending and the bond-stretching parameters, which determine the low- (lower than 140 cm-1) and high- (higher than 140 cm-1) frequency phonons, respectively. 18 refs.