Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low- k films

Chemical vapor deposited (CVD) low- k films using tri methyl silane (3MS) precursors and tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Films were deposited by means of four processes, namely, O 2, O 2 + He process and CO 2, CO 2 + O 2 process for 3MS and TMCTS precursors, respe...

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Bibliographic Details
Published in:Microelectronic engineering 2005-07, Vol.81 (1), p.35-43
Main Authors: Widodo, J., Damayanti, M., Mhaisalkar, S.G., Lu, W., Ong, S., Sritharan, T., Zeng, K.Y., Hsia, L.C.
Format: Article
Language:English
Subjects:
Adhesion
Applied sciences
Chemical vapor deposition
Dielectric properties
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Chemical vapor deposited (CVD) low- k films using tri methyl silane (3MS) precursors and tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Films were deposited by means of four processes, namely, O 2, O 2 + He process and CO 2, CO 2 + O 2 process for 3MS and TMCTS precursors, respectively. Interfacial adhesion energy ( G c), of low- k/Si samples, as measured by a 4-point bending test displayed a linear relationship with film hardness and modulus. Fractography studies indicated two possible failure modes with the primary interface of delamination being either at low- k/Si or Si/epoxy interface. In the former, once delamination initiated at the low- k/Si interface, secondary delamination at the Si/epoxy and epoxy/low- k interfaces was also observed. Films with low hardness (
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2004.11.017