Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(1 0 0) during superlattice formation

• Published in: Journal of crystal growth 2003-04, Vol.251 (1), p.264-268
• Main Authors: Mano, T., Nötzel, R., Hamhuis, G.J., Eijkemans, T.J., Wolter, J.H.
• Format: Article
• Language: English
• Subjects: A1. Surface process; A3. Molecular beam epitaxy; B2. Semiconductor III–V materials; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)02378-3

We investigate the role of In desorption for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (1 0 0) based on elongated island formation, annealing, and stacking in (In,Ga)As/GaAs superlattice growth. We observe well-defined QWR formation only in the presence of thin GaAs capping of the elongated islands before annealing. Without thin GaAs capping, the In composition becomes too low for controlling the nucleation of (In,Ga)As islands in subsequent layers, necessary for QWR formation. Hence, thin GaAs capping is crucial to reproducibly balance In desorption for formation and vertical correlation of well-defined QWRs, serving as unique template for one-dimensional quantum dot ordering.