In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of...

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Published in:Thin solid films 2006-06, Vol.508 (1), p.175-177
Main Authors: Asaoka, H., Yamazaki, T., Yamamoto, H., Shamoto, S.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Lattice match
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Silicon
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description Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O 2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.
doi_str_mv 10.1016/j.tsf.2005.08.413
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subjects Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Lattice match
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Silicon
title In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces
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