Formation of microcrystalline silicon and SiNx films by electron-beam- induced-chemical vapor deposition at ultra low temperature

• Published in: Thin solid films 2006-06, Vol.508 (1-2), p.61-64
• Main Authors: SATO, Tetsuya, MITSUI, Minoru, YAMANAKA, Junji, NAKAGAWA, Kiyokazu, AOKI, Yutaka, SATO, Shouji, MIYATA, Chiharu
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric properties of solids and liquids; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Permittivity (dielectric function); Physics
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.07.333

We synthesized silicon films (hydrogenated microcrystalline silicon in hydrogenated amorphous silicon) and silicon nitride films by electron-beam-induced-chemical vapor deposition combined with low-temperature H tunneling reactions on cooled substrates, which adsorb source gases (SiH4 or Si2H6). The photoconductivity of the silicon film was 0DDT7x10-5D*W-1cm-1and the dark conductivity was 3DDT3x10-5D*W-1cm-1. The dielectric constant of the silicon nitride film was estimated to be 6DDT5-7DDT0.