Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

This work presents the results of research on peculiarities of radiation defect formation in single crystal n-Si, doped by deep level impurities (Cu, Ni, Ir, Rh, Pt and Au), at irradiation by γ-quanta of 60 Co. A property of γ-irradiation to create only vacancies and self-interstitial atoms is used...

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Bibliographic Details
Published in:Radiation effects and defects in solids 2005-08, Vol.160 (8), p.349-356
Main Authors: Makhkamov, Sh, Karimov, M., Khakimov, Z. M., Odilova, N. Dj, Makhmudov, Sh. A., Kurbanov, A. O., Begmatov, K. A.
Format: Article
Language:English
Subjects:
A-center
Cooling rate
Copper
Deep impurities
Gold
Iridium
n-Type silicon
Nickel
Platinum
Rhodium
Self-interstitial atom
Vacancy
γ-irradiation
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Summary:This work presents the results of research on peculiarities of radiation defect formation in single crystal n-Si, doped by deep level impurities (Cu, Ni, Ir, Rh, Pt and Au), at irradiation by γ-quanta of 60 Co. A property of γ-irradiation to create only vacancies and self-interstitial atoms is used to understand the nature of deep levels with participation of these impurities and primary elemental radiation defects. The role of covalence radii and diffusion coefficients in efficiency of radiation defect formation is discussed.
ISSN:1042-0150
1029-4953
DOI:10.1080/10420150500415116