Silicon single-electron parametron cell for solid-state quantum information processing

We present the fabrication and preliminary electrical characteristics of a parametron cell, consisting of two conducting islands separated by a very short nanowire, with an integrated capacitively coupled electrometer and gates, fabricated using a trench-isolated structure on silicon-on-insulator ma...

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Bibliographic Details
Published in:Microelectronic engineering 2003-06, Vol.67, p.755-762
Main Authors: Emiroglu, E.G., Durrani, Z.A.K., Hasko, D.G., Williams, D.A.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Molecular electronics, nanoelectronics
Parametron
q-Bit
Quantum information
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Single-electron
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Summary:We present the fabrication and preliminary electrical characteristics of a parametron cell, consisting of two conducting islands separated by a very short nanowire, with an integrated capacitively coupled electrometer and gates, fabricated using a trench-isolated structure on silicon-on-insulator material using high-resolution electron beam lithography and reactive-ion-etching. The structure is modified in comparison to previously presented devices, such that both the parametron island sizes and the inter-island separation have been reduced in order that single-electron effects influence the polarisation of the cell. This polarisation is used in order to achieve classical computation by the application of appropriate pulses on the gates.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(03)00190-4