The role of point defects in strain relaxation in epitaxially grown SiGe structures

Strain relaxation commonly occurring in SiGe heteroepitaxial systems by misfit dislocations is a very important process affecting the properties of electronic and optoelectronic devices. Point defects introduced into epitaxially grown heterostructures can facilitate the strain relaxation and can eve...

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Published in:Thin solid films 2006-06, Vol.508 (1), p.90-95
Main Author: Vyatkin, A.F.
Format: Article
Language:English
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Heterostructure epitaxy
Point defects
Strain relaxation
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cited_by cdi_FETCH-LOGICAL-c328t-b1bd195e60d8678412d578d1cfd9de08b60b00d42ce70a1f4bb26e87deb0232f3
cites cdi_FETCH-LOGICAL-c328t-b1bd195e60d8678412d578d1cfd9de08b60b00d42ce70a1f4bb26e87deb0232f3
container_end_page 95
container_issue 1
container_start_page 90
container_title Thin solid films
container_volume 508
creator Vyatkin, A.F.
description Strain relaxation commonly occurring in SiGe heteroepitaxial systems by misfit dislocations is a very important process affecting the properties of electronic and optoelectronic devices. Point defects introduced into epitaxially grown heterostructures can facilitate the strain relaxation and can even initiate the process themselves, without introducing misfit dislocations. In the present paper, an analysis of possible effects of point defects on the strain relaxation in epitaxial SiGe heterostructures is done. A phenomenological model of atomic rearrangement stimulated by point defects and resulting in the strain relaxation is proposed. Experimental data supporting the model are discussed.
doi_str_mv 10.1016/j.tsf.2005.08.405
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27969049</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S004060900501998X</els_id><sourcerecordid>27969049</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-b1bd195e60d8678412d578d1cfd9de08b60b00d42ce70a1f4bb26e87deb0232f3</originalsourceid><addsrcrecordid>eNp9kD1PwzAURS0EEqXwA9g8sSU8O1-OmFAFBakSQ8tsOfYLuErjYjvQ_nsSlZnpSk_3XOkdQm4ZpAxYeb9NY2hTDlCkINIcijMyY6KqE15l7JzMAHJISqjhklyFsAUAxnk2I-vNJ1LvOqSupXtn-0gNtqhjoLanIXo1hsdOHVS0rp-OuLdRHazquiP98O6np2u7xKk76Dh4DNfkolVdwJu_nJP356fN4iVZvS1fF4-rRGdcxKRhjWF1gSUYUVYiZ9wUlTBMt6Y2CKIpoQEwOddYgWJt3jS8RFEZbIBnvM3m5O60u_fua8AQ5c4GjV2nenRDkLyqyxryeiyyU1F7F4LHVu693Sl_lAzkpE9u5ahPTvokCDnqG5mHE4PjB98WvQzaYq_RWD_qkcbZf-hf7zx5TQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27969049</pqid></control><display><type>article</type><title>The role of point defects in strain relaxation in epitaxially grown SiGe structures</title><source>ScienceDirect Journals</source><creator>Vyatkin, A.F.</creator><creatorcontrib>Vyatkin, A.F.</creatorcontrib><description>Strain relaxation commonly occurring in SiGe heteroepitaxial systems by misfit dislocations is a very important process affecting the properties of electronic and optoelectronic devices. Point defects introduced into epitaxially grown heterostructures can facilitate the strain relaxation and can even initiate the process themselves, without introducing misfit dislocations. In the present paper, an analysis of possible effects of point defects on the strain relaxation in epitaxial SiGe heterostructures is done. A phenomenological model of atomic rearrangement stimulated by point defects and resulting in the strain relaxation is proposed. Experimental data supporting the model are discussed.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.08.405</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Heterostructure epitaxy ; Point defects ; Strain relaxation</subject><ispartof>Thin solid films, 2006-06, Vol.508 (1), p.90-95</ispartof><rights>2005 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-b1bd195e60d8678412d578d1cfd9de08b60b00d42ce70a1f4bb26e87deb0232f3</citedby><cites>FETCH-LOGICAL-c328t-b1bd195e60d8678412d578d1cfd9de08b60b00d42ce70a1f4bb26e87deb0232f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Vyatkin, A.F.</creatorcontrib><title>The role of point defects in strain relaxation in epitaxially grown SiGe structures</title><title>Thin solid films</title><description>Strain relaxation commonly occurring in SiGe heteroepitaxial systems by misfit dislocations is a very important process affecting the properties of electronic and optoelectronic devices. Point defects introduced into epitaxially grown heterostructures can facilitate the strain relaxation and can even initiate the process themselves, without introducing misfit dislocations. In the present paper, an analysis of possible effects of point defects on the strain relaxation in epitaxial SiGe heterostructures is done. A phenomenological model of atomic rearrangement stimulated by point defects and resulting in the strain relaxation is proposed. Experimental data supporting the model are discussed.</description><subject>Heterostructure epitaxy</subject><subject>Point defects</subject><subject>Strain relaxation</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAURS0EEqXwA9g8sSU8O1-OmFAFBakSQ8tsOfYLuErjYjvQ_nsSlZnpSk_3XOkdQm4ZpAxYeb9NY2hTDlCkINIcijMyY6KqE15l7JzMAHJISqjhklyFsAUAxnk2I-vNJ1LvOqSupXtn-0gNtqhjoLanIXo1hsdOHVS0rp-OuLdRHazquiP98O6np2u7xKk76Dh4DNfkolVdwJu_nJP356fN4iVZvS1fF4-rRGdcxKRhjWF1gSUYUVYiZ9wUlTBMt6Y2CKIpoQEwOddYgWJt3jS8RFEZbIBnvM3m5O60u_fua8AQ5c4GjV2nenRDkLyqyxryeiyyU1F7F4LHVu693Sl_lAzkpE9u5ahPTvokCDnqG5mHE4PjB98WvQzaYq_RWD_qkcbZf-hf7zx5TQ</recordid><startdate>20060605</startdate><enddate>20060605</enddate><creator>Vyatkin, A.F.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060605</creationdate><title>The role of point defects in strain relaxation in epitaxially grown SiGe structures</title><author>Vyatkin, A.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-b1bd195e60d8678412d578d1cfd9de08b60b00d42ce70a1f4bb26e87deb0232f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Heterostructure epitaxy</topic><topic>Point defects</topic><topic>Strain relaxation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vyatkin, A.F.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vyatkin, A.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The role of point defects in strain relaxation in epitaxially grown SiGe structures</atitle><jtitle>Thin solid films</jtitle><date>2006-06-05</date><risdate>2006</risdate><volume>508</volume><issue>1</issue><spage>90</spage><epage>95</epage><pages>90-95</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>Strain relaxation commonly occurring in SiGe heteroepitaxial systems by misfit dislocations is a very important process affecting the properties of electronic and optoelectronic devices. Point defects introduced into epitaxially grown heterostructures can facilitate the strain relaxation and can even initiate the process themselves, without introducing misfit dislocations. In the present paper, an analysis of possible effects of point defects on the strain relaxation in epitaxial SiGe heterostructures is done. A phenomenological model of atomic rearrangement stimulated by point defects and resulting in the strain relaxation is proposed. Experimental data supporting the model are discussed.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.08.405</doi><tpages>6</tpages></addata></record>
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subjects Heterostructure epitaxy
Point defects
Strain relaxation
title The role of point defects in strain relaxation in epitaxially grown SiGe structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T14%3A22%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20role%20of%20point%20defects%20in%20strain%20relaxation%20in%20epitaxially%20grown%20SiGe%20structures&rft.jtitle=Thin%20solid%20films&rft.au=Vyatkin,%20A.F.&rft.date=2006-06-05&rft.volume=508&rft.issue=1&rft.spage=90&rft.epage=95&rft.pages=90-95&rft.issn=0040-6090&rft.eissn=1879-2731&rft_id=info:doi/10.1016/j.tsf.2005.08.405&rft_dat=%3Cproquest_cross%3E27969049%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c328t-b1bd195e60d8678412d578d1cfd9de08b60b00d42ce70a1f4bb26e87deb0232f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27969049&rft_id=info:pmid/&rfr_iscdi=true