Single Phosphorus Ion Implantation into Prefabricated Nanometre Cells of Silicon Devices for Quantum Bit Fabrication

• Published in: Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 6B), p.4124-4128
• Main Authors: Yang, Changyi, Jamieson, David N., Pakes, Chris, Prawer, Steven, Dzurak, Andrew, Stanley, Fay, Spizziri, Paul, Macks, Linda, Gauja, Eric, Clark, Robert G.
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.42.4124

Authors developed a method of single ion implantation that employs detector electrodes adjacent to the prefabricated qubit cells that can detect on-line single keV ion strikes appropriate for the fabrication of shallow arrays. The method of the sub-20 keV single ion detection utilizes a pure Si substrate with high resistivity, a thin (5 nm) SiO2 surface layer, biased electrodes applied to the surface and sensitive electronics that can detect the charge transient from single keV ion strikes. Authors show that the detectors have a near 100% efficiency for keV ions, extremely thin dead layer thickness (approximately 5 nm) and a wide sensitive region extending laterally from the electrodes (greater than 15 mu m) where the nanometer cells can be constructed. Authors compare the method with the other methods, such as those of measuring the secondary electrons or phonons induced by single ion impacts. 17 refs.