Atomic and electronic structures of amorphous ZrO2 and HfO2 films

Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-depo...

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Published in:Microelectronic engineering 2005-08, Vol.81 (2-4), p.524-529
Main Authors: Gritsenko, Vladimir, Gritsenko, Daryja, Shaimeev, Sergei, Aliev, Vladimir, Nasyrov, Kamil, Erenburg, Simon, Tapilin, Vladimir, Wong, Hei, Poon, M.C., Lee, J.H., Lee, J.-W., Kim, C.W.
Format: Article
Language:English
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Summary:Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 DGC. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by 0 2s states. EELS results indicated that the bandgap of ZrO2 and HfO2 films are 4.7 and 5.7 eV, respectively.
ISSN:0167-9317
DOI:10.1016/j.mee.2005.03.056