Solid state recrystallization: a promising technique for the growth of semiconductor materials

Experimental results related to the growth by solid state recrystallization of different semiconductors such as HgCdTe, HgMnTe, CdTe, ZnSe and ZnS are reported and reviewed. The importance of the initial texture and of the deviation from stoichiometry is stressed and the essential role of metal vaca...

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Bibliographic Details
Published in:Crystal research and technology (1979) 2003-04, Vol.38 (3-5), p.215-224
Main Author: Triboulet, R.
Format: Article
Language:English
Subjects:
CdTe
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from solid phases (including multiphase diffusion and recrystallization)
HgCdTe
HgMnTe
II-VI semiconductors
Materials science
Methods of crystal growth
physics of crystal growth
Other semiconductors
Physics
solid state recrystallization
Specific materials
stoichiometry
texture
ZnS
ZnSe
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Summary:Experimental results related to the growth by solid state recrystallization of different semiconductors such as HgCdTe, HgMnTe, CdTe, ZnSe and ZnS are reported and reviewed. The importance of the initial texture and of the deviation from stoichiometry is stressed and the essential role of metal vacancies is emphasized.
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.200310026