Semiconductor nanowires surrounded by cylindrical Al2O3 shells

The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous Al2O3 shells. The Al2O3 was deposited on these seven different semiconductor nanowires by ALD at a substrate temperature of 200...

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Bibliographic Details
Published in:Journal of electronic materials 2003-11, Vol.32 (11), p.1344-1348
Main Authors: MIN, Byungdon, JONG SOO LEE, LEE, Moon-Sook, SOON OH PARK, MOON, Joo-Tae, CHO, Kyoungah, JU WON HWANG, KIM, Hyunsuk, MAN YOUNG SUNG, KIM, Sangsig, PARK, Jeunghee, HEE WON SEO, SEUNG YONG BAE
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
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Summary:The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous Al2O3 shells. The Al2O3 was deposited on these seven different semiconductor nanowires by ALD at a substrate temperature of 200 C using trimethylaluminum (TMA) and distilled H2O. TEM images taken for the nanowires revealed that Al2O3 cylindrical shells surround uniformly all these semiconductor nanowires. TEM study illustrates that the ALD of Al2O3 has an excellent capability to coat any semiconductor nanowires conformally; its coating capability is independent of the chemical component, lattice structure, and growth direction of the nanowires. This study suggests that the ALD of Al2O3 on nanowires is one of the promising methods to prepare cylindrical dielectric shells in coaxially gated, nanowire FETs. 19 refs.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-003-0034-1