Characterization of physical and electrical properties of BaTiO3 films deposited on p-Si by modified polymeric precursors

Highly uniform BaTiO3 (BTO) films with thickness well below 100 nm were deposited on p-Si by spin coating using a modified polymeric precursor method. The polymeric precursor gel was redissolved into glacial acetic acid to improve the wetting property of the spinning solution to the Si substrates (2...

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Bibliographic Details
Published in:Journal of electronic materials 2005-09, Vol.34 (9), p.1259-1263
Main Authors: KONOFAOS, N, ZHONGCHUN WANG, GEORGA, S. N, KRONTIRAS, C. A, PISANIAS, M. N, SOTIROPOULOS, J, EVANGELOU, E. K
Format: Article
Language:English
Subjects:
Acetic acid
Applied sciences
Barium titanates
Composition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Diameters
Electric potential
Electrical properties
Electronics
Ellipsometry
Energy gap
Exact sciences and technology
Insulators
Leakage current
Materials
MIS (semiconductors)
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
Prepolymers
Refractivity
Silicon substrates
Spin coating
Thickness
Voltage
Wetting
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Summary:Highly uniform BaTiO3 (BTO) films with thickness well below 100 nm were deposited on p-Si by spin coating using a modified polymeric precursor method. The polymeric precursor gel was redissolved into glacial acetic acid to improve the wetting property of the spinning solution to the Si substrates (2.5-in. diameter). The morphology, composition, thickness, and refractive index of the films were investigated using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), and ellipsometry. The films are found to be polycrystalline. They exhibit uniformity over the whole wafer in regard to thickness, composition, and absence of surface features. The capacitors constructed with the BTO films on Si were further investigated by electrical characterizations. Current-voltage (I-V) measurements reveal a leakage current due to a Poole-Frenkel mechanism. The energy gap is evaluated to be 3.95 eV. A metal-insulator-semiconductor (MIS) behavior is observed through capacitance-conductance-voltage (C-G-V) measurements. The interface state density (Dit) at the BTO/p-Si interface is estimated to be of the order of 1012 eV−1 cm−2.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-005-0272-5