Some details of the electronic structure of tin oxide films

• Published in: Phys. Status Solidi (b). Vol. 238, no. 1, pp. 7-10. 2003 no. 1, pp. 7-10. 2003, 2003-07, Vol.238 (1), p.7-10
• Main Authors: Shcherba, I. D., Zakrzewska, K., Szuber, J., Czempic, G., Senkevich, A. I., Kravchenko, I. I.
• Format: Article
• Language: English
• Subjects: 73.20.At; 78.70.En; 79.60.Bm; Clean metal, semiconductor, and insulator surfaces; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron and ion emission by liquids and solids; impact phenomena; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; Photoemission and photoelectron spectra; Physics; Surface and interface electron states; Surface states, band structure, electron density of states; X-ray emission spectra and fluorescence; X-ray emission threshold and fluorescence
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200301754

We present experimental results of electronic structure investigations of SnO2 films by X‐ray emission spectroscopy and X‐ray photoelectron spectroscopy methods wherein X‐ray O Kα emission spectra for these materials are reported for the first time. The O 2p electron band shifts toward the upper edge of the valence band when oxygen vacancies increase, but, at the same time, the distance on the binding energy scale from the O 2p band centroid to the Fermi level remains constant. The O 2p valence electron band is broader on the higher binding energy side for oxides having more oxygen vacancies.