4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm/sup 2

This letter reports a newly achieved best result on the specific ON-resistance (R/sub SP/spl I.bar/ON/) of power 4H-SiC bipolar junction transistors (BJTs). A 4H-SiC BJT based on a 12-mum drift layer shows a record-low specific-ON resistance of only 2.9 m/spl Omega/.cm/sup 2/, with an open-base coll...

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Bibliographic Details
Published in:IEEE electron device letters 2006-05, Vol.27 (5), p.368-370
Main Authors: Jianhui Zhang, Alexandrov, P., Burke, T., Zhao, J.H.
Format: Article
Language:English
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Summary:This letter reports a newly achieved best result on the specific ON-resistance (R/sub SP/spl I.bar/ON/) of power 4H-SiC bipolar junction transistors (BJTs). A 4H-SiC BJT based on a 12-mum drift layer shows a record-low specific-ON resistance of only 2.9 m/spl Omega/.cm/sup 2/, with an open-base collector-to-emitter blocking voltage (V/sub ceo/) of 757 V, and a current gain of 18.8. The active area of this 4H-SiC BJT is 0.61 mm/sup 2/, and it has a fully interdigitated design. This high-performance 4H-SiC BJT conducts up to 5.24 A at a forward voltage drop of V/sub CE/=2.5 V, corresponding to a low R/sub SP-ON/ of 2.9 m/spl Omega//spl middot/cm/sup 2/ up to J/sub c/=859 A/cm/sup 2/. This is the lowest specific ON-resistance ever reported for high-power 4H-SiC BJTs.
ISSN:0741-3106
DOI:10.1109/LED.2006.873370