Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

AlGaInN‐based blue–violet laser diodes with a single broad‐area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 μm, and the maximum light output power of 0.94 W under cw operation at 20 °C was achieved for the sample with a stripe wid...

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Bibliographic Details
Published in:Physica status solidi. A, Applied research Applied research, 2003-11, Vol.200 (1), p.122-125
Main Authors: Goto, Shu, Ohta, Makoto, Yabuki, Yoshifumi, Hoshina, Yukio, Naganuma, Kaori, Tamamura, Koshi, Hashizu, Toshihiro, Ikeda, Masao
Format: Article
Language:English
Subjects:
42.55.Px
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:AlGaInN‐based blue–violet laser diodes with a single broad‐area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 μm, and the maximum light output power of 0.94 W under cw operation at 20 °C was achieved for the sample with a stripe width of 10 μm. A super high‐power laser diode array was fabricated using 11 of these high‐performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 °C. This result represents the highest reported output power for blue–violet laser diodes. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0031-8965
1610-1634
1521-396X
DOI:10.1002/pssa.200303325