Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance

Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7 degrees towards (110) GaAs substrates using gas source MBE with various group V/III flux ratios. Only the exciton trans...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 9A), p.5876-5879
Main Authors: Hwang, Jenn-Shyong, Chen, Mei-Fei, Lin, Kuang-I, Tsai, Chiang-Nan, Hwang, Wen-Chi, Chou, Wei-Yang, Lin, Hao-Hsiung, Chen, Ming-Ching
Format: Article
Language:English
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Summary:Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7 degrees towards (110) GaAs substrates using gas source MBE with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the FWHM of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra. 10 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.5876