A 4-mW monolithic CMOS LNA at 5.7 GHz with the gate resistance used for input matching

Design and measured results of a fully integrated 5.7-GHz CMOS low-noise amplifier (LNA) is presented. To design this LNA, the parasitic input resistance of a metal-oxide-semiconductor field-effect transistor (MOSFET) is converted to 50Omegaby a simpleL-Cnetwork, hence eliminating the need for sourc...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2006-04, Vol.16 (4), p.188-190
Main Authors: ASGARAN, Saman, JAMAL DEEN, M, CHEN, Chih-Hung
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:Design and measured results of a fully integrated 5.7-GHz CMOS low-noise amplifier (LNA) is presented. To design this LNA, the parasitic input resistance of a metal-oxide-semiconductor field-effect transistor (MOSFET) is converted to 50Omegaby a simpleL-Cnetwork, hence eliminating the need for source degeneration. It is shown, by means of compact expressions, that this matching method enhances the effective transconductance of the LNA by a factor that is inversely proportional to a MOSFET's input resistance. The effect of our proposed method on the noise figure (NF) of the LNA is also discussed. With an 11.45-dB power gain and a 3.4-dB NF at 4mW of dc power, the presented LNA achieves the best overall performance when compared with the most recently published LNAs.
ISSN:1531-1309
1558-1764
DOI:10.1109/lmwc.2006.872128