Sn- or Hf-doped InSbO4 films deposited by RF magnetron sputtering

Indium antimonate (InSbO4) films were deposited on surface oxidized Si wafer (SiO2/Si) or fused silica glass substrates at 400 DGC by RF magnetron sputtering. The sputtering depositions were carried out with the mixture gas of Ar (40%) and O2 (60%) using a sintered ceramic disk of In0.4Sb0.6O2.1 as...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 2003-10, Vol.442 (1-2), p.184-188
Main Authors: SONG, P. K, SHIRNADA, Y, SHIGEASTO, Y, HATTORI, T, ISHIDA, M, SAEGUSA, K
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Indium antimonate (InSbO4) films were deposited on surface oxidized Si wafer (SiO2/Si) or fused silica glass substrates at 400 DGC by RF magnetron sputtering. The sputtering depositions were carried out with the mixture gas of Ar (40%) and O2 (60%) using a sintered ceramic disk of In0.4Sb0.6O2.1 as target whose compositions were the optimized values to deposit stoichiometric InSbO4 films with the highest crystallinity. In order to investigate the possibility of enhancing carrier density by the impurity dopings, Sn, Hf, Mo and W were tried to be doped into the InSbO4 films. Sn and Hf were confirmed to be effective as dopants for the InSbO4 to increase carrier density, whereas W and Mo were ineffective. The InSbO4 film doped by 7 at.% Sn showed a minimum resistivity of 9.7x10-3 *Wcm, where carrier density and mobility were 2.5x1020 cm-3 and 2.6 cm2V-1 s-1, respectively. The optical band gaps of the non-doped and 7 at.% Sn-doped films were estimated to be approximately 4.05 and 4.2 eV, respectively. The 7 at.% Sn-doped InSbO4 film showed minimum resistivity of 3.3x10-3 *Wcm after post-annealing at 400 DGC in air for 1 h, where carrier density and mobility were 4.1x1020 cm-3 and 5.4 cm2V-1 s-1, respectively.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(03)00979-9