50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz

GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a GaAs substrate show f/sub T/ of 440 GHz, f/sub max...

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Bibliographic Details
Published in:IEEE electron device letters 2005-11, Vol.26 (11), p.784-786
Main Authors: Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R., Thayne, I.G.
Format: Article
Language:English
Subjects:
Gallium arsenide
HEMTs
High-electron mobility transistor (HEMT)
low noise
Metallization
metamorphic
metamorphic high-electron mobility transistor (mHEMT)
mHEMTs
Millimeter wave technology
Millimeter wave transistors
millimeter-wave imaging
MODFETs
nanometer gates
Noise figure
Scanning electron microscopy
short gate
Substrates
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Summary:GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a GaAs substrate show f/sub T/ of 440 GHz, f/sub max/ of 400 GHz, a minimum noise figure of 0.7 dB and an associated gain of 13 dB at 26 GHz, the latter at a drain current of 185 mA/mm and g/sub m/ of 950 mS/mm. In addition, a noise figure of below 1.2 dB with 10.5 dB or higher associated gain at 26 GHz was demonstrated for drain currents in the range 40 to 470 mA/mm at a drain bias of 0.8 V. These devices are ideal for low noise and medium power applications at millimeter-wave frequencies.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.857716