Structure and Room-Temperature Recrystallization of Electrodeposited Copper

The 2 *mm thick copper films have been electrodeposited onto sputtered copper seed layers from a sulfate-sulfuric acid bath (0.3 M CuSO4 + 1.8 M H2SO4 + 70 ppm Cl-) with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonic acid and polyethylene glycol (Mw 8000) organic additives. Crystal structure,...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2003-07, Vol.6 (7), p.C100-C102
Main Authors: Vas’ko, V. A., Tabakovic, I., Riemer, S. C.
Format: Article
Language:English
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Summary:The 2 *mm thick copper films have been electrodeposited onto sputtered copper seed layers from a sulfate-sulfuric acid bath (0.3 M CuSO4 + 1.8 M H2SO4 + 70 ppm Cl-) with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonic acid and polyethylene glycol (Mw 8000) organic additives. Crystal structure, surface structure, stress, and resistivity of the films were characterized over four weeks. Room-temperature recrystallization occurs in the films, accompanied by a change in stress, from compressive to slightly tensile, and a decrease in resistivity. The role of stress-relieving recrystallization is linked to the increase in grain size and enhancement in (111) and especially (200) texture.
ISSN:1099-0062
DOI:10.1149/1.1575592