Study of Annealed NiO Thin Films Sputtered on Unheated Substrate

NiO thin films were deposited on unheated Si substrates by reactive dc magnetron sputtering. Post-deposition annealing was carried out for NiO films in dry air. The effect of annealing temperature (from 500 to 900 C) on the structural, compositional and surface morphological properties of thin NiO f...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003-10, Vol.42 (Part 2, No. 10A), p.L1178-L1181
Main Authors: Hotovy, Ivan, Liday, Jozef, Spiess, Lothar, Sitter, Helmut, Vogrincic, Peter
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:NiO thin films were deposited on unheated Si substrates by reactive dc magnetron sputtering. Post-deposition annealing was carried out for NiO films in dry air. The effect of annealing temperature (from 500 to 900 C) on the structural, compositional and surface morphological properties of thin NiO films was investigated. The films were characterized by powder XRD, AES and AFM. Only the as-deposited films in the metal-sputtering mode were crystalline. Annealing in dry air led to the formation of crystalline phases in all samples. During the annealing process, changes in the crystal structure occurred. All examined NiO films were semiconductors and their conductance increased by four orders of magnitude between 25 and 350 C. 14 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L1178