Comprehensive above-threshold analysis of antiresonant reflecting optical waveguide edge-emitting diode laser

A three-dimensional (3-D) above-threshold analysis has been performed for laterally antiguided laser structures of the antiresonant-reflecting-optical-waveguide type, of relatively large core width (/spl sim/ 10 /spl mu/m), for high-power, single-spatial-mode operation. A 3-D numerical code has been...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2006-06, Vol.42 (6), p.589-599
Main Authors: Napartovich, A.P., Elkin, N.N., Sukharev, A.G., Troshchieva, V.N., Vysotsky, D.V., Nesnidal, M., Stiers, E., Mawst, J., Botez, D.
Format: Article
Language:English
Subjects:
Algorithms
Computational modeling
Computer simulation
Devices
Diode laser
Diode lasers
Gain
gain spatial hole burning (GSHB)
Laser modes
Lasers
laterally antiguided laser structure
Mathematical analysis
mode competition
modeling
Nonuniform
Optical computing
Optical losses
Optical saturation
Optical waveguides
Performance analysis
Quantum well lasers
Thresholds
Waveguide lasers
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Summary:A three-dimensional (3-D) above-threshold analysis has been performed for laterally antiguided laser structures of the antiresonant-reflecting-optical-waveguide type, of relatively large core width (/spl sim/ 10 /spl mu/m), for high-power, single-spatial-mode operation. A 3-D numerical code has been developed, which takes into account carrier diffusion in the quantum well as well as edge radiation losses. The laser characteristics are calculated as functions of the above-threshold drive level. Within the simulation, 3-5 higher order optical modes on a "frozen background" are computed by the Arnoldi algorithm. Because of the nonuniform gain saturation of the lasing mode, the modal gains for higher order modes increase with the drive current due to increasing overlap of their fields with the two-dimensional gain distribution. The onset of threshold for higher order modes puts an upper limit on the range for stable single-mode operation. The above-threshold analysis is done for various values of the width of the reflector region, below and above the lateral-antiresonance condition. It is found that the maximum intermodal discrimination, which in turn provides the maximum single-mode power, is obtained when the reflector-region width is /spl sim/25 % larger that its value at antiresonance. Then, for 10-/spl mu/m-core devices, stable, single-mode operation is found to occur to drive levels as high as 41 /spl times/ threshold, with single-mode output powers as high as 1.45 W.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2006.874065