Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices

A new method for controlling the hole density in single‐walled carbon nanotube field‐effect transistors (SWCNT‐FETs) by solution‐based chemical doping is presented. The use of organic molecules that adsorb onto SWCNTs from solution is investigated. The transfer characteristics of the SWCNT‐FETs exhi...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2005-10, Vol.17 (20), p.2430-2434
Main Authors: Takenobu, T., Kanbara, T., Akima, N., Takahashi, T., Shiraishi, M., Tsukagoshi, K., Kataura, H., Aoyagi, Y., Iwasa, Y.
Format: Article
Language:English
Subjects:
Carbon nanotubes
Carbon nanotubes, single‐walled
Doping
Doping, n‐type
Doping, p‐type
Field-effect transistors
n-type
p-type
single-walled
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Summary:A new method for controlling the hole density in single‐walled carbon nanotube field‐effect transistors (SWCNT‐FETs) by solution‐based chemical doping is presented. The use of organic molecules that adsorb onto SWCNTs from solution is investigated. The transfer characteristics of the SWCNT‐FETs exhibit continuous and precise shifts in threshold voltages (see Figure) upon doping with F4TCNQ molecules, even in air.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200500759