Stability of ultrashallow junction formed by low-energy boron implant and spike annealing problem and solution

Dopant stabilization after high-temperature thermal spike annealing was investigated. 0.2 keV B implanted silicon wafers were thermally spike-annealed at 1100DGC, followed by furnace annealing between 550 and 750DGC to study their stabilities. We have observed the anomalous diffusion of boron during...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2003-06, Vol.6 (6), p.G82-G84
Main Authors: Shao, L, Wang, X, Chen, H, Liu, J, Bennett, J, Larsen, L, Chu, W-K
Format: Article
Language:English
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Summary:Dopant stabilization after high-temperature thermal spike annealing was investigated. 0.2 keV B implanted silicon wafers were thermally spike-annealed at 1100DGC, followed by furnace annealing between 550 and 750DGC to study their stabilities. We have observed the anomalous diffusion of boron during the post-spike furnace annealing in nitrogen ambient. It is indicated that p+/n junctions formed by ultralow energy B implant and spike annealing are not stable during subsequent thermal processes. By adding a megaelectronvolt (MeV) implantation after spike annealing, the B profile shows a negligible diffusion during the following furnace annealing at 750DGC. The concept of MeV implantation can be used as a method to overcome instability of the shallow junction.
ISSN:1099-0062
DOI:10.1149/1.1570631