Surface orientation dependency for AlGaAs growth rate with/without HCl in MOCVD

• Published in: Journal of crystal growth 2003-12, Vol.259 (4), p.327-334
• Main Authors: Fujii, Katsushi, Mochizuki, Tae, Tokumitsu, Yoji
• Format: Article
• Language: English
• Subjects: A1. Growth mechanism; A1. Surface orientation; A3. Metalorganic vapor phase epitaxy; B1. Aluminum gallium arsenide; B1. Hydrogen chloride; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.07.012

The growth rate dependence of Al x Ga 1− x As on surface orientation, Al composition, HCl introduction and growth temperature was investigated in metal-organic chemical vapor deposition. The Al x Ga 1− x As growth rate dependence on surface orientation and growth temperature were found to be similar to results found for GaAs independent of the Al composition. The effects of HCl introduction on growth behavior were dependent on the Al composition and growth temperature. The formation of metal chlorides, due to gas phase reactions between the source materials and HCl, can lead to different surface diffusion characteristics and affect the rate of metal atom incorporation into the growing crystal. This change in reaction and transport rates, coupled with the presence of the etching reaction from between the HCl and growth surface leads to improvement in selective area growth with HCl introduction.