Spin-Polarized Electron Injection through an Fe/InAs Junction

Authors report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency....

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003-02, Vol.42 (Part 2, No. 2A), p.L87-L89
Main Authors: Ohno, Hiroshi, Yoh, Kanji, Sueoka, Kazuhisa, Mukasa, Koichi, Kawaharazuka, Atsushi, Ramsteiner, Manfred E.
Format: Article
Language:English
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Summary:Authors report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12% at the temperature of 6.5 K and the external magnetic field of 10 T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface. 29 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L87