Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

• Published in: IEEE electron device letters 2006-06, Vol.27 (6), p.466-468
• Main Authors: Hallstedt, J., von Haartman, M., Hellstrom, P.-E., Ostling, M., Radamsson, H.H.
• Format: Article
• Language: English
• Subjects: Applied sciences; Boron; Channels; CMOS technology; Compound structure devices; Condensed matter physics; Depletion; Design. Technologies. Operation analysis. Testing; Devices; Doping profiles; Electronics; Exact sciences and technology; Fabrication; Fully depleted (FD); Fysik; Germanium silicon alloys; Halvledarfysik; Heterojunction bipolar transistors; heterostructure; Hole mobility; Integrated circuits; Kondenserade materiens fysik; mobility; MOSFETs; NATURAL SCIENCES; NATURVETENSKAP; Physics; Scattering; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor physics; SiGe; SiGeC; Silicon; Silicon germanides; Silicon germanium; Silicon on insulator technology; Silicon substrates; silicon-on-insulator (SOI) technology; Transistors
• ISSN: 0741-3106; 1558-0563; 1558-0563
• DOI: 10.1109/LED.2006.874763

The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is /spl sim/ 25 nm. All devices demonstrated a near ideal subthreshold behavior, and the drive current and mobility were increased with more than 60% for SiGe and SiGeC channels. When comparing SIMOX and UNIBOND substrates, no significant difference could be detected.