The characteristics of different transparent electrodes on GaN photodetectors

The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal–semiconductor–metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000 Å was 94, 62 and 85%, res...

Full description

Saved in:
Bibliographic Details
Published in:Materials chemistry and physics 2003-04, Vol.80 (1), p.201-204
Main Authors: Chiou, Yu-Zung, Chiou, Jung-Ran, Su, Yan-Kuin, Chang, Shoou-Jinn, Huang, Bohr-Ran, Chang, Chia-Sheng, Lin, Yi-Chao
Format: Article
Language:English
Subjects:
BST
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
GaN
Iii-v semiconductors
ITO
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photodetector
Physics
TiN
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal–semiconductor–metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000 Å was 94, 62 and 85%, respectively, at a wavelength of 400 nm. Unlike TiN films, the variation of transmittance of sputter ITO films was not sensitive to the thickness. Also, the effective barrier height of sputter ITO, TiN and E-gun ITO films to GaN was 0.46, 0.59 and 0.95 eV, respectively. Furthermore, the photo/dark contrast of sputter ITO, TiN and E-gun ITO MSM photodetectors was 0.36, 3 and 4.25 orders, at 5 V bias, respectively.
ISSN:0254-0584
1879-3312
DOI:10.1016/S0254-0584(02)00483-2