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The characteristics of different transparent electrodes on GaN photodetectors
The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal–semiconductor–metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000 Å was 94, 62 and 85%, res...
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| Published in: | Materials chemistry and physics 2003-04, Vol.80 (1), p.201-204 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c368t-c7e78620f91ae329c44d87cd928653311e8fabe38b385a64a3f6ccc3397a8fc13 |
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| cites | cdi_FETCH-LOGICAL-c368t-c7e78620f91ae329c44d87cd928653311e8fabe38b385a64a3f6ccc3397a8fc13 |
| container_end_page | 204 |
| container_issue | 1 |
| container_start_page | 201 |
| container_title | Materials chemistry and physics |
| container_volume | 80 |
| creator | Chiou, Yu-Zung Chiou, Jung-Ran Su, Yan-Kuin Chang, Shoou-Jinn Huang, Bohr-Ran Chang, Chia-Sheng Lin, Yi-Chao |
| description | The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal–semiconductor–metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000
Å was 94, 62 and 85%, respectively, at a wavelength of 400
nm. Unlike TiN films, the variation of transmittance of sputter ITO films was not sensitive to the thickness. Also, the effective barrier height of sputter ITO, TiN and E-gun ITO films to GaN was 0.46, 0.59 and 0.95
eV, respectively. Furthermore, the photo/dark contrast of sputter ITO, TiN and E-gun ITO MSM photodetectors was 0.36, 3 and 4.25 orders, at 5
V bias, respectively. |
| doi_str_mv | 10.1016/S0254-0584(02)00483-2 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28012981</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0254058402004832</els_id><sourcerecordid>28012981</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-c7e78620f91ae329c44d87cd928653311e8fabe38b385a64a3f6ccc3397a8fc13</originalsourceid><addsrcrecordid>eNqFkE1LAzEQQIMoWKs_QdiLoofVfO1u9iRStApVD9ZzSGcnNLLdXZNU8N-btqJHmUNmwpuZ5BFyyugVo6y8fqW8kDktlLyg_JJSqUTO98iIqarOhWB8n4x-kUNyFMI7paxiTIzI03yJGSyNNxDRuxAdhKy3WeOsRY9dzKI3XRjMNscWIfq-wcR02dQ8Z8Oyj6mO6b734ZgcWNMGPPk5x-Tt_m4-echnL9PHye0sB1GqmEOFlSo5tTUzKHgNUjaqgqbmqizSgxkqaxYo1EKowpTSCFsCgBB1ZZQFJsbkfDd38P3HGkPUKxcA29Z02K-D5ooyXqsNWOxA8H0IHq0evFsZ_6UZ1Rt5eitPb8xoyvVWnuap7-xngQlgWpscgAt_zbISKWTibnYcpt9-OvQ6gMMOsHE-KdFN7_7Z9A1M0IQW</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28012981</pqid></control><display><type>article</type><title>The characteristics of different transparent electrodes on GaN photodetectors</title><source>ScienceDirect Journals</source><creator>Chiou, Yu-Zung ; Chiou, Jung-Ran ; Su, Yan-Kuin ; Chang, Shoou-Jinn ; Huang, Bohr-Ran ; Chang, Chia-Sheng ; Lin, Yi-Chao</creator><creatorcontrib>Chiou, Yu-Zung ; Chiou, Jung-Ran ; Su, Yan-Kuin ; Chang, Shoou-Jinn ; Huang, Bohr-Ran ; Chang, Chia-Sheng ; Lin, Yi-Chao</creatorcontrib><description>The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal–semiconductor–metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000
Å was 94, 62 and 85%, respectively, at a wavelength of 400
nm. Unlike TiN films, the variation of transmittance of sputter ITO films was not sensitive to the thickness. Also, the effective barrier height of sputter ITO, TiN and E-gun ITO films to GaN was 0.46, 0.59 and 0.95
eV, respectively. Furthermore, the photo/dark contrast of sputter ITO, TiN and E-gun ITO MSM photodetectors was 0.36, 3 and 4.25 orders, at 5
V bias, respectively.</description><identifier>ISSN: 0254-0584</identifier><identifier>EISSN: 1879-3312</identifier><identifier>DOI: 10.1016/S0254-0584(02)00483-2</identifier><identifier>CODEN: MCHPDR</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>BST ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; GaN ; Iii-v semiconductors ; ITO ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Photodetector ; Physics ; TiN</subject><ispartof>Materials chemistry and physics, 2003-04, Vol.80 (1), p.201-204</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-c7e78620f91ae329c44d87cd928653311e8fabe38b385a64a3f6ccc3397a8fc13</citedby><cites>FETCH-LOGICAL-c368t-c7e78620f91ae329c44d87cd928653311e8fabe38b385a64a3f6ccc3397a8fc13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14737374$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chiou, Yu-Zung</creatorcontrib><creatorcontrib>Chiou, Jung-Ran</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><creatorcontrib>Chang, Shoou-Jinn</creatorcontrib><creatorcontrib>Huang, Bohr-Ran</creatorcontrib><creatorcontrib>Chang, Chia-Sheng</creatorcontrib><creatorcontrib>Lin, Yi-Chao</creatorcontrib><title>The characteristics of different transparent electrodes on GaN photodetectors</title><title>Materials chemistry and physics</title><description>The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal–semiconductor–metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000
Å was 94, 62 and 85%, respectively, at a wavelength of 400
nm. Unlike TiN films, the variation of transmittance of sputter ITO films was not sensitive to the thickness. Also, the effective barrier height of sputter ITO, TiN and E-gun ITO films to GaN was 0.46, 0.59 and 0.95
eV, respectively. Furthermore, the photo/dark contrast of sputter ITO, TiN and E-gun ITO MSM photodetectors was 0.36, 3 and 4.25 orders, at 5
V bias, respectively.</description><subject>BST</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>GaN</subject><subject>Iii-v semiconductors</subject><subject>ITO</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Photodetector</subject><subject>Physics</subject><subject>TiN</subject><issn>0254-0584</issn><issn>1879-3312</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQQIMoWKs_QdiLoofVfO1u9iRStApVD9ZzSGcnNLLdXZNU8N-btqJHmUNmwpuZ5BFyyugVo6y8fqW8kDktlLyg_JJSqUTO98iIqarOhWB8n4x-kUNyFMI7paxiTIzI03yJGSyNNxDRuxAdhKy3WeOsRY9dzKI3XRjMNscWIfq-wcR02dQ8Z8Oyj6mO6b734ZgcWNMGPPk5x-Tt_m4-echnL9PHye0sB1GqmEOFlSo5tTUzKHgNUjaqgqbmqizSgxkqaxYo1EKowpTSCFsCgBB1ZZQFJsbkfDd38P3HGkPUKxcA29Z02K-D5ooyXqsNWOxA8H0IHq0evFsZ_6UZ1Rt5eitPb8xoyvVWnuap7-xngQlgWpscgAt_zbISKWTibnYcpt9-OvQ6gMMOsHE-KdFN7_7Z9A1M0IQW</recordid><startdate>20030429</startdate><enddate>20030429</enddate><creator>Chiou, Yu-Zung</creator><creator>Chiou, Jung-Ran</creator><creator>Su, Yan-Kuin</creator><creator>Chang, Shoou-Jinn</creator><creator>Huang, Bohr-Ran</creator><creator>Chang, Chia-Sheng</creator><creator>Lin, Yi-Chao</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030429</creationdate><title>The characteristics of different transparent electrodes on GaN photodetectors</title><author>Chiou, Yu-Zung ; Chiou, Jung-Ran ; Su, Yan-Kuin ; Chang, Shoou-Jinn ; Huang, Bohr-Ran ; Chang, Chia-Sheng ; Lin, Yi-Chao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-c7e78620f91ae329c44d87cd928653311e8fabe38b385a64a3f6ccc3397a8fc13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BST</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>GaN</topic><topic>Iii-v semiconductors</topic><topic>ITO</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Photodetector</topic><topic>Physics</topic><topic>TiN</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chiou, Yu-Zung</creatorcontrib><creatorcontrib>Chiou, Jung-Ran</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><creatorcontrib>Chang, Shoou-Jinn</creatorcontrib><creatorcontrib>Huang, Bohr-Ran</creatorcontrib><creatorcontrib>Chang, Chia-Sheng</creatorcontrib><creatorcontrib>Lin, Yi-Chao</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials chemistry and physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chiou, Yu-Zung</au><au>Chiou, Jung-Ran</au><au>Su, Yan-Kuin</au><au>Chang, Shoou-Jinn</au><au>Huang, Bohr-Ran</au><au>Chang, Chia-Sheng</au><au>Lin, Yi-Chao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The characteristics of different transparent electrodes on GaN photodetectors</atitle><jtitle>Materials chemistry and physics</jtitle><date>2003-04-29</date><risdate>2003</risdate><volume>80</volume><issue>1</issue><spage>201</spage><epage>204</epage><pages>201-204</pages><issn>0254-0584</issn><eissn>1879-3312</eissn><coden>MCHPDR</coden><abstract>The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal–semiconductor–metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000
Å was 94, 62 and 85%, respectively, at a wavelength of 400
nm. Unlike TiN films, the variation of transmittance of sputter ITO films was not sensitive to the thickness. Also, the effective barrier height of sputter ITO, TiN and E-gun ITO films to GaN was 0.46, 0.59 and 0.95
eV, respectively. Furthermore, the photo/dark contrast of sputter ITO, TiN and E-gun ITO MSM photodetectors was 0.36, 3 and 4.25 orders, at 5
V bias, respectively.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0254-0584(02)00483-2</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0254-0584 |
| ispartof | Materials chemistry and physics, 2003-04, Vol.80 (1), p.201-204 |
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| language | eng |
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| source | ScienceDirect Journals |
| subjects | BST Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology GaN Iii-v semiconductors ITO Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photodetector Physics TiN |
| title | The characteristics of different transparent electrodes on GaN photodetectors |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T18%3A31%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20characteristics%20of%20different%20transparent%20electrodes%20on%20GaN%20photodetectors&rft.jtitle=Materials%20chemistry%20and%20physics&rft.au=Chiou,%20Yu-Zung&rft.date=2003-04-29&rft.volume=80&rft.issue=1&rft.spage=201&rft.epage=204&rft.pages=201-204&rft.issn=0254-0584&rft.eissn=1879-3312&rft.coden=MCHPDR&rft_id=info:doi/10.1016/S0254-0584(02)00483-2&rft_dat=%3Cproquest_cross%3E28012981%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c368t-c7e78620f91ae329c44d87cd928653311e8fabe38b385a64a3f6ccc3397a8fc13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28012981&rft_id=info:pmid/&rfr_iscdi=true |