Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation

• Published in: IEEE transactions on microwave theory and techniques 2006-01, Vol.54 (1), p.40-45
• Main Authors: Chao Lu, Pham, A.-V.H., Livezey, D.
• Format: Article
• Language: English
• Subjects: Analog integrated circuits; Circuit optimization; CMOS analog integrated circuits (ICs); CMOS technology; Distributed amplifiers; Gain; Integrated circuit yield; Phase measurement; Phase shifters; Phased arrays; Radio frequency
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2005.860892

We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-/spl mu/m RF CMOS technology. The phase shifter achieves a measured 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured 360/spl deg/ phase tuning range in both 3.5- and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from -3.7 dB to 5.4-dB gain and -4.5 dB to 2.1-dB gain in the 3.5- and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than -10 dB at all conditions. The chip size is 1200 /spl mu/m/spl times/2300 /spl mu/m including pads.