The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

The thermal annealing behavior of oxygen in neutron irradiation Czochralski-silicon (CZ-Si) has been investigated systemically. It was found that a heavy dose of neutron irradiation accelerated the oxygen precipitation in CZ-Si under higher annealing temperature (1070–1130°C). We attribute this effe...

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Bibliographic Details
Published in:Journal of crystal growth 2003-06, Vol.253 (1), p.6-9
Main Authors: Li, Y.X., Guo, H.Y., Liu, B.D., Liu, T.J., Hao, Q.Y., Liu, C.C., Yang, D.R., Que, D.L.
Format: Article
Language:English
Subjects:
A1. Defects
A1. Point defects
A1. Radiation
B2. Semiconducting silicon
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Microscopic defects (voids, inclusions, etc.)
Neutron radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:The thermal annealing behavior of oxygen in neutron irradiation Czochralski-silicon (CZ-Si) has been investigated systemically. It was found that a heavy dose of neutron irradiation accelerated the oxygen precipitation in CZ-Si under higher annealing temperature (1070–1130°C). We attribute this effect to the form of defect cluster induced by neutron irradiation, it may be as the core for the oxygen precipitation heterogeneous nuclei and those shorten the nucleation time and accelerate oxygen precipitates in the bulk of Si wafer. In addition, the oxygen diffusion is enhanced by the presence of a large quantity of vacancies near the surface of the wafer.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(03)00956-4