Highly scalable ballistic injection AND-type (BiAND) flash memory

An AND-type split-gate Flash memory cell with a trench select gate and a buried n/sup +/ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F/sup 2/. Furthermore, both the programming speed and the read cu...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-01, Vol.53 (1), p.109-111
Main Authors: Meng-Yi Wu, Sheng-Huei Dai, Shu-Fen Hu, Yang, E.C.-S., Hsu, C.C.-H., Ya-Chin King
Format: Article
Language:English
Subjects:
AND-type array
Applied sciences
ballistic
Computer architecture
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
Flash memory
Flash memory (computers)
Gates
Integrated circuits
Integrated circuits by function (including memories and processors)
Logic gates
Magnetic and optical mass memories
Microprocessors
Programming
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Split gate flash memory cells
split-gate Flash
Storage and reproduction of information
Transistors
Trenches
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Summary:An AND-type split-gate Flash memory cell with a trench select gate and a buried n/sup +/ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F/sup 2/. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.860636