Low temperature air-annealing of Cu(InGa)Se2 single crystals

CuInSe2 and CuIn0.95Ga0.05Se2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 deg C. Both CuInSe2 and CuIn0.95Ga0.05Se2 samples were studied using photoluminescence (PL). The CuInSe2 samples were also studied using Rutherford Backscattering Channelin...

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Published in:Thin solid films 2006-07, Vol.511-512 (Complete), p.135-139
Main Authors: Yakushev, M.V., Jack, A., Pettigrew, I., Feofanov, Y., Mudryi, A.V., Krustok, J.
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cited_by cdi_FETCH-LOGICAL-c191t-6ddccfeb9329f3215f0ffe1bb9d8013ab6ec0e9d6d5d09ebae8efc7c67284b3f3
cites cdi_FETCH-LOGICAL-c191t-6ddccfeb9329f3215f0ffe1bb9d8013ab6ec0e9d6d5d09ebae8efc7c67284b3f3
container_end_page 139
container_issue Complete
container_start_page 135
container_title Thin solid films
container_volume 511-512
creator Yakushev, M.V.
Jack, A.
Pettigrew, I.
Feofanov, Y.
Mudryi, A.V.
Krustok, J.
description CuInSe2 and CuIn0.95Ga0.05Se2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 deg C. Both CuInSe2 and CuIn0.95Ga0.05Se2 samples were studied using photoluminescence (PL). The CuInSe2 samples were also studied using Rutherford Backscattering Channeling (RBS/C) and nuclear reaction analysis (NRA). Before annealing the samples showed low dechanneling parameters suggesting high quality lattice structure. The PL spectra of both CuInSe2 and CuIn0.95Ga0.05Se2 revealed bands associated with band-tail recombination mechanism. Annealing at 120 DDGC and higher temperatures considerably modified the RBS/C and PL spectra. NRA indicated a gradual increase in the oxygen content. PL analysis suggested that annealing increases both the mean-square amplitude of potential fluctuations and the level of compensation. Changes in the RBS/C spectra demonstrated that annealing at up to 160 DDGC does not result in the growth of In2O3 surface layer but modifies primarily the Se- and Cu-related RBS/C yield. These modifications are consistent with an increase in the concentration of defect complexes.
doi_str_mv 10.1016/j.tsf.2005.11.089
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28025249</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28025249</sourcerecordid><originalsourceid>FETCH-LOGICAL-c191t-6ddccfeb9329f3215f0ffe1bb9d8013ab6ec0e9d6d5d09ebae8efc7c67284b3f3</originalsourceid><addsrcrecordid>eNotkM1KxDAURrNQcBx9AHddiS5a703aTANuZHDGgYILdR3S9EZa-mfSIvP2dhhXBz4O3-IwdoeQIKB8apIpuIQDZAliArm6YCuAFGIJCq7YdQgNACDnYsWei-E3mqgbyZtp9hSZ2sem78m0df8dDS7azg-Hfm8eP4hHYdlaiqw_hsm04YZdugV0-881-9q9fm7f4uJ9f9i-FLFFhVMsq8paR6USXDnBMXPgHGFZqioHFKaUZIFUJausAkWloZyc3Vi54XlaCifW7P78O_rhZ6Yw6a4OltrW9DTMQfMceMZTtYh4Fq0fQvDk9OjrzvijRtCnNrrRSxt9aqMR9dJG_AFOi1tG</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28025249</pqid></control><display><type>article</type><title>Low temperature air-annealing of Cu(InGa)Se2 single crystals</title><source>ScienceDirect Freedom Collection 2022-2024</source><creator>Yakushev, M.V. ; Jack, A. ; Pettigrew, I. ; Feofanov, Y. ; Mudryi, A.V. ; Krustok, J.</creator><creatorcontrib>Yakushev, M.V. ; Jack, A. ; Pettigrew, I. ; Feofanov, Y. ; Mudryi, A.V. ; Krustok, J.</creatorcontrib><description>CuInSe2 and CuIn0.95Ga0.05Se2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 deg C. Both CuInSe2 and CuIn0.95Ga0.05Se2 samples were studied using photoluminescence (PL). The CuInSe2 samples were also studied using Rutherford Backscattering Channeling (RBS/C) and nuclear reaction analysis (NRA). Before annealing the samples showed low dechanneling parameters suggesting high quality lattice structure. The PL spectra of both CuInSe2 and CuIn0.95Ga0.05Se2 revealed bands associated with band-tail recombination mechanism. Annealing at 120 DDGC and higher temperatures considerably modified the RBS/C and PL spectra. NRA indicated a gradual increase in the oxygen content. PL analysis suggested that annealing increases both the mean-square amplitude of potential fluctuations and the level of compensation. Changes in the RBS/C spectra demonstrated that annealing at up to 160 DDGC does not result in the growth of In2O3 surface layer but modifies primarily the Se- and Cu-related RBS/C yield. These modifications are consistent with an increase in the concentration of defect complexes.</description><identifier>ISSN: 0040-6090</identifier><identifier>DOI: 10.1016/j.tsf.2005.11.089</identifier><language>eng</language><ispartof>Thin solid films, 2006-07, Vol.511-512 (Complete), p.135-139</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c191t-6ddccfeb9329f3215f0ffe1bb9d8013ab6ec0e9d6d5d09ebae8efc7c67284b3f3</citedby><cites>FETCH-LOGICAL-c191t-6ddccfeb9329f3215f0ffe1bb9d8013ab6ec0e9d6d5d09ebae8efc7c67284b3f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yakushev, M.V.</creatorcontrib><creatorcontrib>Jack, A.</creatorcontrib><creatorcontrib>Pettigrew, I.</creatorcontrib><creatorcontrib>Feofanov, Y.</creatorcontrib><creatorcontrib>Mudryi, A.V.</creatorcontrib><creatorcontrib>Krustok, J.</creatorcontrib><title>Low temperature air-annealing of Cu(InGa)Se2 single crystals</title><title>Thin solid films</title><description>CuInSe2 and CuIn0.95Ga0.05Se2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 deg C. Both CuInSe2 and CuIn0.95Ga0.05Se2 samples were studied using photoluminescence (PL). The CuInSe2 samples were also studied using Rutherford Backscattering Channeling (RBS/C) and nuclear reaction analysis (NRA). Before annealing the samples showed low dechanneling parameters suggesting high quality lattice structure. The PL spectra of both CuInSe2 and CuIn0.95Ga0.05Se2 revealed bands associated with band-tail recombination mechanism. Annealing at 120 DDGC and higher temperatures considerably modified the RBS/C and PL spectra. NRA indicated a gradual increase in the oxygen content. PL analysis suggested that annealing increases both the mean-square amplitude of potential fluctuations and the level of compensation. Changes in the RBS/C spectra demonstrated that annealing at up to 160 DDGC does not result in the growth of In2O3 surface layer but modifies primarily the Se- and Cu-related RBS/C yield. These modifications are consistent with an increase in the concentration of defect complexes.</description><issn>0040-6090</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotkM1KxDAURrNQcBx9AHddiS5a703aTANuZHDGgYILdR3S9EZa-mfSIvP2dhhXBz4O3-IwdoeQIKB8apIpuIQDZAliArm6YCuAFGIJCq7YdQgNACDnYsWei-E3mqgbyZtp9hSZ2sem78m0df8dDS7azg-Hfm8eP4hHYdlaiqw_hsm04YZdugV0-881-9q9fm7f4uJ9f9i-FLFFhVMsq8paR6USXDnBMXPgHGFZqioHFKaUZIFUJausAkWloZyc3Vi54XlaCifW7P78O_rhZ6Yw6a4OltrW9DTMQfMceMZTtYh4Fq0fQvDk9OjrzvijRtCnNrrRSxt9aqMR9dJG_AFOi1tG</recordid><startdate>20060726</startdate><enddate>20060726</enddate><creator>Yakushev, M.V.</creator><creator>Jack, A.</creator><creator>Pettigrew, I.</creator><creator>Feofanov, Y.</creator><creator>Mudryi, A.V.</creator><creator>Krustok, J.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060726</creationdate><title>Low temperature air-annealing of Cu(InGa)Se2 single crystals</title><author>Yakushev, M.V. ; Jack, A. ; Pettigrew, I. ; Feofanov, Y. ; Mudryi, A.V. ; Krustok, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c191t-6ddccfeb9329f3215f0ffe1bb9d8013ab6ec0e9d6d5d09ebae8efc7c67284b3f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yakushev, M.V.</creatorcontrib><creatorcontrib>Jack, A.</creatorcontrib><creatorcontrib>Pettigrew, I.</creatorcontrib><creatorcontrib>Feofanov, Y.</creatorcontrib><creatorcontrib>Mudryi, A.V.</creatorcontrib><creatorcontrib>Krustok, J.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yakushev, M.V.</au><au>Jack, A.</au><au>Pettigrew, I.</au><au>Feofanov, Y.</au><au>Mudryi, A.V.</au><au>Krustok, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature air-annealing of Cu(InGa)Se2 single crystals</atitle><jtitle>Thin solid films</jtitle><date>2006-07-26</date><risdate>2006</risdate><volume>511-512</volume><issue>Complete</issue><spage>135</spage><epage>139</epage><pages>135-139</pages><issn>0040-6090</issn><abstract>CuInSe2 and CuIn0.95Ga0.05Se2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 deg C. Both CuInSe2 and CuIn0.95Ga0.05Se2 samples were studied using photoluminescence (PL). The CuInSe2 samples were also studied using Rutherford Backscattering Channeling (RBS/C) and nuclear reaction analysis (NRA). Before annealing the samples showed low dechanneling parameters suggesting high quality lattice structure. The PL spectra of both CuInSe2 and CuIn0.95Ga0.05Se2 revealed bands associated with band-tail recombination mechanism. Annealing at 120 DDGC and higher temperatures considerably modified the RBS/C and PL spectra. NRA indicated a gradual increase in the oxygen content. PL analysis suggested that annealing increases both the mean-square amplitude of potential fluctuations and the level of compensation. Changes in the RBS/C spectra demonstrated that annealing at up to 160 DDGC does not result in the growth of In2O3 surface layer but modifies primarily the Se- and Cu-related RBS/C yield. These modifications are consistent with an increase in the concentration of defect complexes.</abstract><doi>10.1016/j.tsf.2005.11.089</doi><tpages>5</tpages></addata></record>
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title Low temperature air-annealing of Cu(InGa)Se2 single crystals
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T08%3A54%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20temperature%20air-annealing%20of%20Cu(InGa)Se2%20single%20crystals&rft.jtitle=Thin%20solid%20films&rft.au=Yakushev,%20M.V.&rft.date=2006-07-26&rft.volume=511-512&rft.issue=Complete&rft.spage=135&rft.epage=139&rft.pages=135-139&rft.issn=0040-6090&rft_id=info:doi/10.1016/j.tsf.2005.11.089&rft_dat=%3Cproquest_cross%3E28025249%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c191t-6ddccfeb9329f3215f0ffe1bb9d8013ab6ec0e9d6d5d09ebae8efc7c67284b3f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28025249&rft_id=info:pmid/&rfr_iscdi=true