Thickness dependent integrity of gate oxide on SOI

To investigate the gate oxide integrity for the silicon-on-insulator (SOI) wafer, we evaluated the time-dependent dielectric breakdown (TDDB) characteristic of gate oxide formed on SOI wafer with gate oxide thickness ( T ox) as a parameter. The TDDB characteristic was degraded with increasing the T...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2003-06, Vol.216 (1), p.329-333
Main Authors: Tsujiuchi, Mikio, Iwamatsu, Toshiaki, Naruoka, Hideki, Umeda, Hiroshi, Ipposhi, Takashi, Maegawa, Shigeto, Inoue, Yasuo
Format: Article
Language:English
Subjects:
GOI
SIMOX
SOI
TDDB
Threading dislocation
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To investigate the gate oxide integrity for the silicon-on-insulator (SOI) wafer, we evaluated the time-dependent dielectric breakdown (TDDB) characteristic of gate oxide formed on SOI wafer with gate oxide thickness ( T ox) as a parameter. The TDDB characteristic was degraded with increasing the T ox of gate oxide for the SOI wafer. The time to 50% failure of breakdown ( T BD) was shorter when T ox was thicker than 7 nm in contrast to the gate oxide for the bulk silicon wafer.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(03)00419-7