Strain energy density for hexagonal ultra thin overlayers

Based on the transformed stiffness constants for ultra-thin layers of hexagonal crystals, we have derived explicitly the Hookian relation and the strain energy density for the stressed overlayers 10 1 ̄ 0 , 11 2 ̄ 0 , 10 1 ̄ 1 and 11 2 ̄ 2 . Calculations have been partly carried out by a computer pr...

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Bibliographic Details
Published in:Thin solid films 2003-03, Vol.428 (1), p.20-24
Main Authors: Schönfeldt, J.-H.C., Kunert, H.W.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Hexagonal crystal
Mechanical and acoustical properties
Physical properties of thin films, nonelectronic
Physics
Strains
Stresses
Surface waves
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Based on the transformed stiffness constants for ultra-thin layers of hexagonal crystals, we have derived explicitly the Hookian relation and the strain energy density for the stressed overlayers 10 1 ̄ 0 , 11 2 ̄ 0 , 10 1 ̄ 1 and 11 2 ̄ 2 . Calculations have been partly carried out by a computer programme. Several important applications of the strain energy density related to dislocations, kink, monatomic step and stacking faults are discussed. Many opto-electronic devices based on hexagonal compounds such as 6H-SiC, ZnO and GaN exhibit the above phenomena as well as misfit dislocations, stresses and strains. Appropriate experimental techniques for the strain energy density measurements are suggested.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(02)01253-1