Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates

• Published in: Thin solid films 2003-06, Vol.434 (1-2), p.94-99
• Main Authors: ELERS, K.-E, SAANILA, V, LI, W.-M, SOININEN, P. J, KOSTAMO, J. T, HAUKKA, S, JUHANOJA, J, BESTING, W. F. A
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/s0040-6090(03)00501-7

Diffusion barrier materials, such as TiN, WxN, WNxCy and their nanolaminates were deposited by atomic layer deposition method. TiN film exhibited excellent properties, but WxN film exhibited high resistivity despite the low residue concentration. Both TiN and WxN films suffered from serious incompatibility with the copper metal. WNxCy film was deposited by introducing triethylboron as a reducing agent for tungsten. Excellent film properties were obtained, including very good compatibility with the copper metal, evident as strong adhesion and no pitting on the copper surface. Nanolaminate barrier stacks of WxN/TiN and WNxCy/TiN were deposited. TiN deposition did not cause copper pitting when thin WNxCy film was deposited underneath. 14 refs.