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Thin film of CeO2-SiO2: a new ion storage layer for smart windows
Thin solid films of CeO2-SiO2 used as a counter-electrode layer in electrochromic devices, were prepared by the sol-gel dip coating, using an aqueous-based process. The influence of the SiO2 addition on electrochemistry of the CeO2 oxide coatings was determined by chronoamperometric measurements. Th...
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Published in: | Solar energy materials and solar cells 2003-12, Vol.80 (4), p.443-449 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Thin solid films of CeO2-SiO2 used as a counter-electrode layer in electrochromic devices, were prepared by the sol-gel dip coating, using an aqueous-based process. The influence of the SiO2 addition on electrochemistry of the CeO2 oxide coatings was determined by chronoamperometric measurements. The films exhibit a larger charge storage capacity, which was determined as a function of the coatings thickness. The peak occurrence in the chronoamperometric curve during the deintercalation of lithium ions in the cerium/silicon films is analyzed in terms of trapping energy levels for Li ions into the film. In situ UV-Vis spectroelectrochemical measurements of the CeO2-SiO2 coatings indicated that the films remained transparent in the visible spectral range during the intercalation process. Powders were characterized by X-ray diffraction after the same thermal treatment of the films, indicating a decrease of crystallinity with the doping. The feasibility for use of these electrodes as ion storage for electrochromic devices was investigated. |
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ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/j.solmat.2003.08.012 |