Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination

A new precursor combination, hafnium tetraiodide and oxygen for atomic layer deposition of hafnium oxide thin films has been studied. The growth rate of hafnium oxide on Si(100) substrates was investigated at substrate temperatures ranging from 400 to 750 C. A saturation of the growth rate with incr...

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Bibliographic Details
Published in:Thin solid films 2003-03, Vol.427 (1-2), p.147-151
Main Authors: SUNDQVIST, J, HARSTA, A, AAFIK, J, KUKLI, K, AIDLA, A
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:A new precursor combination, hafnium tetraiodide and oxygen for atomic layer deposition of hafnium oxide thin films has been studied. The growth rate of hafnium oxide on Si(100) substrates was investigated at substrate temperatures ranging from 400 to 750 C. A saturation of the growth rate with increasing substrate temperature depended on the oxygen pressure and was achieved at 500-620 C. Growth of phase pure polycrystalline monoclinic HfO2 could be realised by tuning process parameters such as the partial pressure of O2 and the evaporation temperature of HfI4. Straightforward thickness control was demonstrated by varying the number of deposition cycles between 50 and 1000. 17 refs.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(02)01165-3