Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire

Epitaxial AlN films were deposited on (0001) sapphire using a new MOCVD process in which optimal substrate nitridation is combined with modulated NH3 flow and a growth pressure reduction from 150 torr to 40 torr after the first stage of growth. A significant improvement in the FWHM of the rocking cu...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 4A), p.1590-1591
Main Authors: Paduano, Qing, Weyburne, David
Format: Article
Language:English
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Summary:Epitaxial AlN films were deposited on (0001) sapphire using a new MOCVD process in which optimal substrate nitridation is combined with modulated NH3 flow and a growth pressure reduction from 150 torr to 40 torr after the first stage of growth. A significant improvement in the FWHM of the rocking curves was obtained. The best layers had FWHM of 330 arc sec/650 arc sec for the (0002)/(10-12) reflections, resp. 13 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.1590